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Polar TM Power MOSFET
IXTA12N50P
IXTI12N50P
IXTP12N50P
V DSS
I D25
R DS(on)
= 500V
= 12A
≤ 500m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (I XTA )
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
500
500
± 30
V
V
V
G
S
(TAB)
V GSM
I D25
I DM
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 40
12
30
V
A
A
Leaded TO-263 (I XTI )
I A
E AS
dV/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
12
600
10
A
mJ
V/ns
G
D
S
(TAB)
P D
T C = 25 ° C
200
W
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
TO-220 (I XTP )
T L
1.6mm (0.062) from case for 10s
300
° C
T SOLD
M d
M d
Weight
Plastic body for 10s
Mounting torque
Mounting force
TO-263
Leaded TO-263
TO-220
(TO-220)
(TO-263)
260
1.13 / 10
10..65 / 2.2..14.6
2.5
2.8
3.0
° C
Nm/lb.in.
N/lb.
g
g
g
G
G = Gate
S = Source
D S
(TAB)
D = Drain
TAB = Drain
Features
International standard packages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
500 V
Unclamped Inductive Switching (UIS)
rated
Low package inductance
easy to drive and to protect
V GS(th)
V DS = V GS , I D = 250 μ A
3.0
5.5
V
I GSS
I DSS
R DS(on)
V GS = ± 30V, V DS = 0V
V DS = V DSS
V GS = 0V T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
± 100 nA
5 μ A
250 μ A
500 m Ω
Advantages
Easy to mount
Space savings
High power density
? 2008 IXYS CORPORATION, All rights reserved
DS99322F(04/08)
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